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InGaAs點(diǎn)元探測(cè)器三元體系InAs/GaAs 的帶隙涵蓋從InAs 的0.35eV （3.5μm） 到GaAs 的l. 43eV（0.87μm） 的范圍。通過(guò)改變InGaAs 吸收層的合成成分，可以使光電探測(cè)器的響應(yīng)度在終用戶所要求的波長(zhǎng)條件下達(dá)到大值，從而提高信噪比。
InGaAs點(diǎn)元探測(cè)器三元體系InAs/GaAs 的帶隙涵蓋從InAs 的0.35eV (3.5μm) 到GaAs 的l. 43eV(0.87μm) 的范圍。通過(guò)改變InGaAs 吸收層的合成成分，可以使光電探測(cè)器的響應(yīng)度在終用戶所要求的波長(zhǎng)條件下達(dá)到大值，從而提高信噪比。
常規(guī)InGaAs點(diǎn)元探測(cè)器
Pin characteristics(Ta=25℃)
parameter | unit | Typical value | ||||||||||
Active aperture | mm | 1 | 2 | 3 | ||||||||
package | —— | TO-46 | 6CLCC | TO-39 | 8CLCC | TO-39 | 4CLCC | |||||
Wavelength range | μm | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 | ||
Modol No.(LAPD-) | --- | 1000 | 1000S | 1000-C | 1000S-C | 2000 | 2000S | 2000-C | 200S-C | 3000 | 3000-C | |
R@0.65um.0V | A/W | 0.05 | 0.35 | 0.05 | 0.35 | 0.05 | 0.35 | 0.05 | 0.35 | 0.05 | 0.05 | |
R@0.85um.0V | A/W | 0.20 | 0.50 | 0.20 | 0.50 | 0.20 | 0.50 | 0.20 | 0.50 | 0.20 | 0.20 | |
R@1.31um.0V | A/W | 0.9 | ||||||||||
R@1.55um.0V | A/W | 1.0 | ||||||||||
Shunt resistance | MW | 50 | 25 | 10 | ||||||||
Dark current@-5V | nA | 5 | 10 | 25 | ||||||||
capacitance@0V | pF | 80 | 170 | 400 | 600 | 1500 | 2500 | |||||
NEP@1.55um | pW/Hz1/2 | 0.02 | 0.04 | 0.06 | ||||||||
常規(guī)InGaAs光電晶片
Pin characteristics(Ta=25℃)
parameter | unit | Typical value | ||||
Active aperture | mm | 1 | 2 | 3 | ||
thickness | μm | 300 | ||||
Wavelength range | μm | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 | 0.5-1.7 | 0.9-1.7 |
Modol No.(PIN-) | --- | 1000 | 1000s | 2000 | 2000s | 3000 |
R@0.65um.0V | A/W | 0.05 | 0.35 | 0.05 | 0.35 | 0.05 |
R@0.85um.0V | A/W | 0.20 | 0.50 | 0.50 | 0.50 | 0.20 |
R@1.31um.0V | A/W | 0.9 | ||||
R@1.55um.0V | A/W | 1.0 | ||||
Shunt resistance | MW | 80 | 25 | 10 | ||
Dark current@-5V | nA | 5 | 10 | 25 | ||
capacitance@0V | pF | 140 | 500 | 1500 | ||
NEP@1.55um | pW/Hz1/2 | 0.02 | 0.04 | 0.06 | ||
波長(zhǎng)擴(kuò)展型InGaAs探測(cè)器
Paremeter | Active area（mm） | Cut off wavelength | A/W min. (typ.) | NEP W/ÖHz min. | Dark Current max. | Package |
LD-GAP500 | 0.5 | 1.7um | 0.95@1550nm | 0.8x10-14 | 30 @5V(nA) | TO46 |
LD-GAP1000 | 1 | 1.7um | 0.95@1550nm | 1x 10-14 | 100 @5V(nA) | TO46 |
LD-GAP2000 | 2 | 1.7um | 0.95@1550nm | 3 x10-14 | 200 @1V(nA) | TO5 |
LD-GAP3000 | 3 | 1.7um | 0.95@1550nm | 5 x10-14 | 500 (@1V(nA) | TO5 |
LD-GAP5000 | 5 | 1.7um | 0.95@1550nm | 28 x10-14 | 10mA(@0.3V(nA) | TO5 |
LD-GAP300-1.9 | 0.3 | 1.9um | 0.9/1.0 | 3 x10-14 | 0.1@1V(uA) | TO46 |
LD-GAP500-1.9 | 0.5 | 1.9um | 0.9/1.0 | 9 x10-14 | 0.9@1V(uA) | TO46 |
LD-GAP1000-1.9 | 1 | 1.9um | 0.9/1.0 | 0.13 x10-12 | 4@1V(uA) | TO46 |
LD-GAP2000-1.9 | 2 | 1.9um | 0.9/1.0 | 0.26x10-12 | 10@1V(uA) | TO5 |
LD-GAP3000-1.9 | 3 | 1.9um | 0.9/1.0 | 0.38 x10-12 | 22.5@1V(uA) | TO5 |
LD-GAP300-2.05 | 0.3 | 2.05um | 0.9/1.0 | 5.7 x10-14 | 0.5@1V(uA) | TO46 |
LD-GAP500-2.05 | 0.5 | 2.05um | 0.9/1.0 | 8.1 x10-14 | 1@1V(uA) | TO46 |
LD-GAP1000-2.05 | 1 | 2.05um | 0.9/1.0 | 23.4 x10-14 | 4@1V(uA) | TO46 |
LD-GAP2000-2.05 | 2 | 2.05um | 0.9/1.0 | 42.8 x10-14 | 10@1V(uA) | TO5 |
LD-GAP3000-2.05 | 3 | 2.05um | 0.95/1.1 | 90.7 x10-14 | 12@0.5V(uA) | TO5 |
LD-GAP300-2.2 | 0.3 | 2.2um | 0.9/1.0 | 0.14x10-12 | 1@1V(uA) | TO46 |
LD-GAP500-2.2 | 0.5 | 2.2um | 0.9/1.0 | 0.22x10-12 | 5@1V(uA) | TO46 |
LD-GAP1000-2.2 | 1 | 2.2um | 0.9/1.0 | 0.46x10-12 | 10@1V(uA) | TO46 |
LD-GAP2000-2.2 | 2 | 2.2um | 0.9/1.0 | 1.28 x10-12 | 40@1V(uA) | TO5 |
LD-GAP3000-2.2 | 3 | 2.2um | 0.9/1.0 | 2.87x10-12 | 100@1V(uA) | TO5 |
LD-GAP300-2.6 | 0.3 | 2.6um | 0.9/1.0 | 0.81x10-12 | 13@1V(uA) | TO46 |
LD-GAP500-2.6 | 0.5 | 2.6um | 0.9/1.0 | 1.43x10-12 | 20@0.5V(uA) | TO46 |
LD-GAP1000-2.6 | 1 | 2.6um | 0.9/1.0 | 2.03x10-12 | 80@0.5V(uA) | TO46 |
LD-GAP2000-2.6 | 2 | 2.6um | 1.0 | 3.31x10-12 | 320@0.5V(uA) | TO5 |
LD-GAP3000-2.6 | 3 | 2.6um | 1.0 | 5.74x10-12 | 500@0.5V(uA) | TO5 |
提供專(zhuān)業(yè)定制，封裝形式多樣，可根據(jù)客戶要求選擇封裝形式，并可依據(jù)需求定制TE制冷產(chǎn)品。
Paremeter | Active area（mm） | Cut off wavelength | A/W min. (typ.) | NEP W/ÖHz min. | Dark Current max. | Package |
LD-GAP1000TE1 | 1 | 1.7um | 0.95/1.0 | 5.4x10-15 | 3@5V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1 | 2 | 1.1x10-14 | 20@2V(nA) | |||
LD-GAP3000TE1 | 3 | 1.1x10-14 | 50@2V(nA) | |||
LD-GAP5000TE1 | 5 | 2.4x10-14 | 100@0.1V(nA) | |||
LD-GAP1000TE1-2.05 | 1 | 2.05um | 0.9/1.0 | 5.4x10-14 | 500@1V(nA) |
TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.05 | 2 | 1.3x10-13 | 1100@1V(nA) | |||
LD-GAP3000TE1-2.05 | 3 | 3.2x10-13 | 1360@1V(nA) | |||
LD-GAP1000TE1-2.2 | 1 | 2.2um | 0.9/1.0 | 1.6x10-13 | 1250@1V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.2 | 2 | 1.1x10-12 | 5000@1V(nA) | |||
LD-GAP3000TE1-2.2 | 3 | 5.5x10-13 | 6250@0.5V(nA) | |||
LD-GAP1000TE1-2.6 | 1 | 2.6um | 0.9/1.0 | 6x10-13 | 8000@0.5V(nA) | TO5/TO37/TO8/TO66 |
LD-GAP2000TE1-2.6 | 2 | 9.8x10-13 | 32000@0.5V(nA) | |||
LD-GAP3000TE1-2.6 | 3 | 1.7x10-12 | 50000@0.5V(nA) | |||
LD-GAP1000TE2 | 1 | 1.7um | 0.95/1.0 | 3.7x10-15 | 2@5V(nA) | TO8/TO66 |
LD-GAP2000TE2 | 2 | 5.3x10-15 | 10@2V(nA) | |||
LD-GAP3000TE2 | 3 | 7.5x10-15 | 20@2V(nA) | |||
LD-GAP5000TE2 | 5 | 1.7x10-14 | 50@0.1V(nA) | |||
LD-GAP1000TE2-2.05 | 1 | 2.05um | 0.9/1.0 | 3.7x10-14 | 200@1V(nA) |
TO8/TO66 |
LD-GAP2000TE2-2.05 | 2 | 9.6x10-14 | 240@1V(nA) | |||
LD-GAP3000TE2-2.05 | 3 | 2x10-13 | 700@0.5V(nA) | |||
LD-GAP1000TE2-2.2 | 1 | 2.2um | 0.9/1.0 | 1.2x10-13 | 700@1V(nA) | TO8/TO66 |
LD-GAP2000TE2-2.2 | 2 | 2.9x10-13 | 2900@1V(nA) | |||
LD-GAP3000TE2-2.2 | 3 | 4.1x10-13 | 3600@0.5V(nA) | |||
LD-GAP1000TE2-2.6 | 1 | 2.6um | 0.9/1.0 | 4x10-13 | 3600@0.5V(nA) | TO8/TO66 |
LD-GAP2000TE2-2.6 | 2 | 6.5x10-13 | 14500@0.5V(nA) | |||
LD-GAP3000TE2-2.6 | 3 | 1.1x10-12 | 22700@0.5V(nA) |
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